MVPE |
Specification
MAIN SPEC | Unit | Target | Specification | Comment |
Name | Multi-Stacked Vapor Phase Epitaxy System | |||
System Type | SUS-Chamber with inner Quartz Reactor &Heater | |||
Heater 소재 | KanthalAPM Stripe heat element | |||
Heat Control | K-type Thermocouple 3 point / PID | |||
Heat up speed | ℃ / min | - | ≥ 50 | 700 → 1000℃ |
Max Temp | ℃ | ≥ 1100 | 1130 |
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Loading 방식 | Front door open (manual) | |||
6 inch wafer outpur | ea/ Day | ≥ 140 | ≥ 140 | 7Run/Day |
Doping range | ×1016/㎤ |
| 5 ~ 1000 | Un-dopedGaN~Heavily doped N-type GaN |
WTW,STS Uniformity | % | ≤ 2.0 | ≤ 2.0 |
|
최대가용성장률 | ㎛/h | 10 | 4 ~ 42 |
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Utility Spec. | Unit | Specification | Comment | |
Main | Power | kW | Max. 150 | 3상 380 60Hz 4W |
PCW | Temp | ℃ | 15 ~ 20 | Separate Chiller system |
FlowRate | Litter / min | Max. 80 | ||
Source Gas | HCl | Bar | 3 ~ 7 | Max 20 Litter / min |
NH3 | Bar | 3 ~ 7 | Max 40 Litter / min | |
DCS | Bar | 2 ~ 6 | ||
N2 | Bar | 4 ~ 8 | Max 200 Litter / min | |
CDA | Air | Bar | 5 ~ 8 | |
Scrubber | Gas | Litter / min | ≥ 1000 | Standard Wet scrubber |
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